Manufacturer Part Number
IXFK32N100P
Manufacturer
IXYS Corporation
Introduction
High power N-channel MOSFET with high voltage and high current capability.
Product Features and Performance
N-channel MOSFET with voltage rating up to 1000V
Continuous drain current of 32A at 25°C case temperature
Low on-resistance of 320mΩ at 16A, 10V
High input capacitance of 14,200pF at 25V
Power dissipation up to 960W at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Product Advantages
High voltage and high current handling capability
Low on-resistance for improved efficiency
Suitable for high power switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 1000V
Gate-Source Voltage (Vgs): ±30V
Continuous Drain Current (Id): 32A at 25°C
On-Resistance (Rds(on)): 320mΩ at 16A, 10V
Input Capacitance (Ciss): 14,200pF at 25V
Power Dissipation (Pd): 960W at 25°C
Quality and Safety Features
RoHS3 compliant
TO-264AA (IXFK) package
Compatibility
Suitable for use in high power switching applications, such as power supplies, motor drives, and industrial controls.
Application Areas
Power supplies
Motor drives
Industrial controls
Welding equipment
Induction heating
Product Lifecycle
This product is an active and widely used MOSFET device. There are no known plans for discontinuation, and replacement or upgraded models are readily available.
Key Reasons to Choose This Product
High voltage and current handling capability for demanding applications
Low on-resistance for improved efficiency and reduced power losses
Suitable for a wide range of high power switching applications
Robust and reliable performance over a wide temperature range
RoHS3 compliance for environmentally-friendly use
