Manufacturer Part Number
IXFK360N15T2
Manufacturer
IXYS Corporation
Introduction
High-performance MOSFET transistor with advanced TrenchT2 technology
Product Features and Performance
N-Channel MOSFET with very low on-resistance
Optimized for high-power, high-frequency applications
Supports continuous drain current up to 360A at 25°C
Can withstand drain-to-source voltage up to 150V
Gate-to-source voltage range of ±20V
Very low on-resistance of 4mΩ at 60A, 10V
High input capacitance of 47,500pF at 25V
High power dissipation capability of 1,670W at case temperature
Product Advantages
Excellent efficiency and thermal performance
Suitable for high-power, high-frequency switching applications
Robust design with high voltage and current handling capabilities
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 150V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4mΩ @ 60A, 10V
Continuous Drain Current (Id): 360A at 25°C
Input Capacitance (Ciss): 47,500pF @ 25V
Power Dissipation (Pd): 1,670W at case temperature
Quality and Safety Features
ROHS3 compliant
Housed in rugged TO-264AA package
Compatibility
Compatible with a wide range of high-power, high-frequency applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Electric vehicles
Renewable energy systems
Product Lifecycle
Currently in active production
No plans for discontinuation
Replacement and upgrade options available
Several Key Reasons to Choose This Product
Excellent efficiency and thermal performance
High power and voltage handling capabilities
Suitable for demanding high-power, high-frequency applications
Robust and reliable design
Wide range of compatible applications
