Manufacturer Part Number
IXFK40N90P
Manufacturer
IXYS Corporation
Introduction
The IXFK40N90P is a high-performance N-channel MOSFET transistor designed for demanding power applications.
Product Features and Performance
High drain to source voltage of 900V
Low on-resistance of 230mΩ at 20A, 10V
High continuous drain current of 40A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching with low gate charge of 230nC at 10V
High power dissipation of 960W at Tc
Product Advantages
Excellent performance and efficiency for high-voltage, high-current applications
Robust design for reliable operation in demanding environments
Optimized for easy integration and thermal management
Key Technical Parameters
Drain to Source Voltage (Vdss): 900V
Gate to Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 230mΩ @ 20A, 10V
Continuous Drain Current (Id): 40A @ 25°C
Input Capacitance (Ciss): 14000pF @ 25V
Power Dissipation (Pd): 960W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-264AA (IXFK) package for reliable thermal performance
Designed and manufactured to high-quality standards
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and industrial automation
Application Areas
High-voltage, high-current power electronics
Industrial and commercial equipment
Renewable energy systems
Electric vehicles and hybrid-electric vehicles
Product Lifecycle
Currently in active production
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent power handling and efficiency for demanding applications
Robust and reliable design for long-term operation
Easy integration and thermal management
Comprehensive technical features and performance specifications
Compliance with industry standards and safety requirements