Manufacturer Part Number
IXFK27N80
Manufacturer
IXYS Corporation
Introduction
The IXFK27N80 is a high-performance N-channel MOSFET transistor from IXYS Corporation.
Product Features and Performance
High breakdown voltage of 800V
Low on-resistance of 300mΩ @ 13.5A, 10V
High continuous drain current of 27A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 400nC @ 10V
Capable of handling high power dissipation of up to 500W
Product Advantages
Excellent performance in high-voltage, high-current applications
Reliable and durable design
Efficient heat dissipation
Key Technical Parameters
Drain to Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 300mΩ @ 13.5A, 10V
Continuous Drain Current (Id): 27A @ 25°C
Input Capacitance (Ciss): 9740pF @ 25V
Power Dissipation (Tc): 500W
Quality and Safety Features
RoHS3 compliant
Robust TO-264-3, TO-264AA package
Compatibility
The IXFK27N80 is a direct replacement for various high-voltage, high-current MOSFET applications.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
The IXFK27N80 is an actively supported product by IXYS Corporation and is not nearing discontinuation. Replacement or upgrade options are available if needed.
Key Reasons to Choose This Product
Exceptional performance in high-voltage, high-current applications
Reliable and durable design for long-term use
Efficient heat dissipation for improved thermal management
RoHS3 compliance for environmental sustainability
Wide range of compatible applications