Manufacturer Part Number
IXFK27N80Q
Manufacturer
IXYS Corporation
Introduction
High power, N-channel MOSFET transistor
Product Features and Performance
Designed for high-voltage, high-power switching applications
Capable of handling high voltages up to 800V
Continuous drain current of 27A at 25°C
Low on-resistance of 320mOhm at 500mA, 10V
Fast switching performance with low gate charge of 170nC at 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capability
High voltage and current ratings
Low on-resistance for efficient power conversion
Fast switching for high-frequency applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 320mOhm
Continuous Drain Current (Id): 27A
Input Capacitance (Ciss): 7600pF
Power Dissipation (Tc): 500W
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and safety
Compatibility
Compatible with TO-264-3 and TO-264AA (IXFK) packages
Can be used in a variety of high-voltage, high-power switching applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
This product is an active, in-production device from IXYS Corporation
Replacement and upgrade options may be available as technology evolves
Key Reasons to Choose This Product
Excellent power handling and voltage capability
Low on-resistance for high efficiency
Fast switching performance for high-frequency applications
Wide operating temperature range for reliability in harsh environments
RoHS3 compliance for use in environmentally-conscious designs
