Manufacturer Part Number
MRF6S21050LR3
Manufacturer
NXP Semiconductors
Introduction
This product is a high-performance, RF power MOSFET transistor designed for use in RF power amplifier applications.
Product Features and Performance
5W output power
16dB gain
Operates at 2.16GHz frequency
Capable of handling up to 68V and 450mA current
Utilizes LDMOS (Laterally Diffused Metal-Oxide-Semiconductor) technology
Product Advantages
Excellent power handling and efficiency
High gain and bandwidth performance
Robust and reliable design
Suitable for various RF power amplifier applications
Key Technical Parameters
Manufacturer Part Number: MRF6S21050LR3
Power Output: 11.5W
Gain: 16dB
Frequency: 2.16GHz
Voltage Rating: 68V
Current Rating: 450mA
Quality and Safety Features
RoHS3 compliant
NI-400 package for chassis mount
Compatibility
This transistor is compatible with a variety of RF power amplifier designs and applications.
Application Areas
RF power amplifiers
Wireless communications equipment
Radar systems
Industrial, scientific, and medical (ISM) applications
Product Lifecycle
This product is currently in production and available for purchase. No discontinuation or replacement information is provided.
Key Reasons to Choose This Product
Excellent power handling and efficiency for high-performance RF applications
Reliable and robust LDMOS technology
Suitable for a wide range of RF power amplifier designs
Competitive pricing and availability through NXP Semiconductors