MRF6S20010GNR1 - NXP USA Inc.

Manufacturer Part Number

MRF6S20010GNR1

Manufacturer

NXP Semiconductors

Introduction

The MRF6S20010GNR1 is a high-performance LDMOS (Laterally Diffused Metal Oxide Semiconductor) RF transistor designed for use in various RF power applications.

Product Features and Performance

High power output of 10W

Operates at a frequency of 2.17GHz

Provides a gain of 15.5dB

Supports a rated voltage of 68V and a test voltage of 28V

Tested current of 130mA

Product Advantages

Excellent power handling and efficiency

Reliable and robust LDMOS technology

Suitable for a wide range of RF power applications

Key Technical Parameters

Technology: LDMOS

Power Output: 10W

Current (Test): 130mA

Voltage (Rated): 68V

Voltage (Test): 28V

Gain: 15.5dB

Frequency: 2.17GHz

Mounting Type: Surface Mount

Quality and Safety Features

RoHS3 compliant

Packaged in a reliable TO-270BA package

Compatibility

Suitable for use in various RF power applications, such as base stations, amplifiers, and transmitters.

Application Areas

Telecommunication equipment

Broadcast equipment

Industrial RF power applications

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Excellent power handling and efficiency for high-performance RF applications.

Reliable and robust LDMOS technology for long-term reliability.

Suitable for a wide range of RF power applications due to its technical specifications.

RoHS3 compliance and reliable packaging ensure quality and safety.