Manufacturer Part Number
MRF6S19140HR3
Manufacturer
NXP Semiconductors
Introduction
High-performance RF MOSFET transistor designed for use in wireless infrastructure applications
Product Features and Performance
High power output of 29W
High current capability of 1.15A
Wide operating voltage range of 68V
High gain of 16dB
Operates in the 1.93GHz to 1.99GHz frequency range
Product Advantages
Excellent reliability and stability
Compact and efficient design
Suitable for chassis mount applications
Key Technical Parameters
Technology: LDMOS
Package: SOT-957A
Supplier Device Package: NI-880H-2L
Packaging: Tape & Reel (TR)
Quality and Safety Features
RoHS3 compliant
Compatibility
Suitable for use in wireless infrastructure applications
Application Areas
Wireless base stations
RF power amplifiers
Cellular and 3G/4G networks
Product Lifecycle
Currently in production
Replacement and upgrade options available
Key Reasons to Choose This Product
High power output and efficiency
Wide operating voltage and frequency range
Reliable and stable performance
Compact and easy to integrate design
Compliance with relevant safety and environmental standards
MRF6S19100HMOTOROLA