Manufacturer Part Number
MRF6S19100HR3
Manufacturer
Freescale Semiconductor, Inc. (NXP Semiconductors)
Introduction
RF Power MOSFET Transistor
Product Features and Performance
High power density
Excellent linearity
High efficiency
Robust and reliable design
Optimized for broadband applications
Product Advantages
Supports high frequency and high power applications
Provides superior gain and efficiency
Durable and long-lasting performance
Key Technical Parameters
Power Output: 22W
Current (Test): 900mA
Voltage (Rated): 68V
Gain: 16.1dB
Voltage (Test): 28V
Frequency: 1.99GHz
Quality and Safety Features
RoHS3 compliant
Reliable and durable design
Compatibility
Suitable for a variety of broadband wireless communication applications
Application Areas
Cellular infrastructure
Wireless base stations
Satellite communications
Radar systems
Medical equipment
Product Lifecycle
This product is currently in active production and availability. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Exceptional power handling and efficiency
Excellent linearity for high-performance RF applications
Robust and reliable design for long-term use
Optimized for broadband applications requiring high power and frequency
Compliant with RoHS3 environmental standards