Manufacturer Part Number
MRF6S19060NR1
Manufacturer
NXP Semiconductors
Introduction
The MRF6S19060NR1 is a discrete semiconductor product, specifically a radio frequency (RF) transistor in the MOSFET (metal-oxide-semiconductor field-effect transistor) category.
Product Features and Performance
12W output power
610mA test current
68V rated voltage
16dB gain
28V test voltage
93GHz operating frequency
Surface mount packaging
Product Advantages
High power handling capability
Efficient RF performance
Compact surface mount design
Key Technical Parameters
Technology: LDMOS (laterally diffused metal-oxide-semiconductor)
Package: TO-270AB
Supplier Device Package: TO-270 WB-4
RoHS compliance: RoHS3 Compliant
Quality and Safety Features
Manufacturer's packaging: TO-270 WB-4
Tape & Reel (TR) packaging option
Compatibility
Suitable for use in various RF and microwave applications
Application Areas
Suitable for use in RF and microwave applications, such as power amplifiers, transmitters, and wireless communication systems
Product Lifecycle
Currently in production
Replacement or upgrade options may be available from the manufacturer
Several Key Reasons to Choose This Product
High power output capacity
Efficient RF performance characteristics
Compact and surface mountable package
RoHS3 compliance for environmentally conscious applications
Availability of tape and reel packaging for automated assembly