Manufacturer Part Number
MRF6S18060NR1
Manufacturer
NXP Semiconductors
Introduction
This product is a high-performance RF MOSFET transistor designed for use in radio frequency (RF) power amplifier applications, particularly in the 1.99 GHz frequency range.
Product Features and Performance
High power output of 60W
Low on-resistance for efficient operation
High gain of 15dB
Operates at a rated voltage of 68V
Tested at a current of 600mA and voltage of 26V
Designed for 1.99 GHz frequency operation
Product Advantages
Efficient RF power amplification
Robust and reliable performance
Compact surface mount package
Suitable for a wide range of RF power applications
Key Technical Parameters
Power output: 60W
Current (test): 600mA
Voltage (rated): 68V
Gain: 15dB
Voltage (test): 26V
Frequency: 1.99GHz
Quality and Safety Features
RoHS3 compliant
Reliable TO-270 package
Compatibility
Suitable for use in RF power amplifier circuits
Application Areas
Wireless communications
Radar systems
Broadcasting equipment
RF power amplifier designs
Product Lifecycle
Current production model
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High power output for efficient RF amplification
Low on-resistance for improved efficiency
Robust and reliable performance in the 1.99 GHz frequency range
Compact surface mount package for easy integration
RoHS3 compliance for environmental responsibility
