Manufacturer Part Number
MRF6P23190HR6
Manufacturer
NXP Semiconductors
Introduction
High-performance LDMOS transistor for RF power amplifier applications
Product Features and Performance
Power output: 40W
Test current: 1.9A
Rated voltage: 68V
Gain: 14dB
Test voltage: 28V
Frequency: 2.39GHz
Chassis mount design
Product Advantages
Efficient and reliable performance
Suitable for high-power RF applications
Robust design for demanding environments
Key Technical Parameters
LDMOS technology
RoHS3 compliant
NI-1230 package
Quality and Safety Features
Reliable and durable construction
Compliance with RoHS regulations
Compatibility
Suitable for a wide range of RF power amplifier applications
Application Areas
Wireless communications
Broadcast equipment
Industrial and scientific RF applications
Product Lifecycle
Current production model
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent power output and efficiency
Robust and reliable performance
Compatibility with a variety of RF applications
Compliance with environmental regulations
Availability of replacement and upgrade options
