Manufacturer Part Number
MRF6S19100HR3
Manufacturer
NXP Semiconductors
Introduction
This product is a high-power LDMOS RF transistor from NXP Semiconductors.
It is part of the MRF6 series of discrete semiconductor products.
Product Features and Performance
Designed for high-power RF applications up to 1.99 GHz
Capable of delivering 22W of output power
Provides 16.1 dB of gain at 28V and 900 mA
Product Advantages
High power output
Efficient LDMOS technology
Wide operating frequency range
Key Technical Parameters
Output Power: 22W
Operating Current: 900 mA
Operating Voltage: 68V
Operating Frequency: 1.99 GHz
Quality and Safety Features
RoHS3 compliant
Housed in a SOT-957A package
Compatibility
Compatible with various high-power RF applications
Application Areas
Suitable for use in RF power amplifier circuits
Applicable in wireless communication systems, radar, and other high-power RF equipment
Product Lifecycle
This product is an active and supported part of the MRF6 series
Replacement or upgrade options may be available for this product in the future
Key Reasons to Choose This Product
High power output capabilities
Efficient LDMOS technology for improved performance
Wide operating frequency range suitable for various applications
Compliant with RoHS3 regulations for environmental responsibility
MRF6S19140HR3NXP USA Inc.FET RF 68V 1.99GHZ NI-880