MRF6S21060NBR1 - NXP USA Inc.

Manufacturer Part Number

MRF6S21060NBR1

Manufacturer

NXP Semiconductors

Introduction

The MRF6S21060NBR1 is a high-performance LDMOS RF power transistor designed for use in wireless infrastructure and industrial applications.

Product Features and Performance

High power and efficiency

Wide operating frequency range of 2.12 GHz

Excellent linearity and thermal stability

Robust design for reliable operation

Product Advantages

Optimized for high power and efficiency

Suitable for various wireless infrastructure and industrial applications

Rugged and reliable performance

Key Technical Parameters

Power Output: 14 W

Current (Test): 610 mA

Voltage (Rated): 68 V

Gain: 15.5 dB

Voltage (Test): 28 V

Frequency: 2.12 GHz

Quality and Safety Features

RoHS3 compliant

Robust package design (TO-272 WB-4)

Compatibility

Suitable for use in various wireless infrastructure and industrial applications

Application Areas

Wireless infrastructure equipment (e.g., base stations)

Industrial RF power amplifiers

Product Lifecycle

The MRF6S21060NBR1 is an active product, with no indication of discontinuation or upcoming replacement.

Key Reasons to Choose This Product

High power and efficiency for demanding applications

Excellent linearity and thermal stability for reliable performance

Robust and RoHS-compliant design for long-term use

Broad compatibility with various wireless infrastructure and industrial applications