Manufacturer Part Number
MRF6S21100HR3
Manufacturer
NXP Semiconductors
Introduction
High-performance RF power MOSFET transistor
Product Features and Performance
Designed for use in high-frequency, high-power applications
Capable of delivering up to 23W of output power
Wide operating frequency range of 2.11GHz to 2.17GHz
High gain of 15.9dB
Suitable for operation at 28V and 950mA
Product Advantages
Excellent power and efficiency performance
Robust and reliable design
Suitable for various high-frequency, high-power applications
Key Technical Parameters
Power Output: 23W
Operating Voltage: 68V
Operating Current: 950mA
Frequency Range: 2.11GHz to 2.17GHz
Gain: 15.9dB
Quality and Safety Features
RoHS3 compliant
Chassis mount package (SOT-957A)
Compatibility
Suitable for use in a wide range of high-frequency, high-power applications
Application Areas
Wireless base stations
Broadcast transmitters
Industrial RF power amplifiers
Radar systems
Product Lifecycle
Currently in production
No discontinuation or replacement plans announced
Key Reasons to Choose This Product
High power output and efficiency for demanding applications
Wide operating frequency range for versatile usage
Robust and reliable design for long-term performance
RoHS3 compliance for environmentally-conscious applications