MRF6S21060NR1 - NXP USA Inc.

Manufacturer Part Number

MRF6S21060NR1

Manufacturer

NXP Semiconductors

Introduction

High-power LDMOS transistor for 2.12 GHz applications

Product Features and Performance

14W output power

5 dB gain

68V rated voltage

610 mA test current

28V test voltage

12 GHz operating frequency

Product Advantages

Suitable for high-power RF applications

Reliable LDMOS technology

Optimized for 2.12 GHz frequency

Key Technical Parameters

Power output: 14W

Gain: 15.5 dB

Rated voltage: 68V

Test current: 610 mA

Test voltage: 28V

Frequency: 2.12 GHz

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount applications

Compatibility

Compatible with TO-270AB package

Application Areas

Suitable for high-power RF applications at 2.12 GHz

Product Lifecycle

Current product, no discontinuation expected

Replacement or upgrade options available from NXP Semiconductors

Key Reasons to Choose This Product

High output power of 14W

Excellent gain of 15.5 dB

Reliable LDMOS technology

Optimized for 2.12 GHz frequency

RoHS3 compliant

Surface mount package