Manufacturer Part Number
MRF6S21060NR1
Manufacturer
NXP Semiconductors
Introduction
High-power LDMOS transistor for 2.12 GHz applications
Product Features and Performance
14W output power
5 dB gain
68V rated voltage
610 mA test current
28V test voltage
12 GHz operating frequency
Product Advantages
Suitable for high-power RF applications
Reliable LDMOS technology
Optimized for 2.12 GHz frequency
Key Technical Parameters
Power output: 14W
Gain: 15.5 dB
Rated voltage: 68V
Test current: 610 mA
Test voltage: 28V
Frequency: 2.12 GHz
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Compatible with TO-270AB package
Application Areas
Suitable for high-power RF applications at 2.12 GHz
Product Lifecycle
Current product, no discontinuation expected
Replacement or upgrade options available from NXP Semiconductors
Key Reasons to Choose This Product
High output power of 14W
Excellent gain of 15.5 dB
Reliable LDMOS technology
Optimized for 2.12 GHz frequency
RoHS3 compliant
Surface mount package
MRF6S21100NBFairchild (onsemi)