Manufacturer Part Number
MRF6S21100HR3
Manufacturer
Freescale Semiconductor, Inc. (NXP Semiconductors)
Introduction
High-power LDMOS transistor for RF power amplifier applications
Product Features and Performance
23W output power
9dB gain
Operates at 2.11GHz to 2.17GHz frequency range
Capable of 10A current rating
Product Advantages
Suitable for high-power RF power amplifier designs
Excellent performance characteristics
Robust LDMOS technology
Key Technical Parameters
Power Output: 23W
Current (Test): 950mA
Voltage (Rated): 68V
Voltage (Test): 28V
Current Rating: 10A
Frequency Range: 2.11GHz to 2.17GHz
Quality and Safety Features
RoHS3 compliant
NI-780H-2L package
Compatibility
Chassis mount design
Application Areas
RF power amplifiers
Wireless communications equipment
Base stations
Radar systems
Product Lifecycle
Current production model
Replacements and upgrades available from the manufacturer
Key Reasons to Choose This Product
High-power output capability (23W)
Wide frequency range (2.11GHz to 2.17GHz)
Robust LDMOS technology for reliable performance
RoHS3 compliance for environmental responsibility
Chassis mount design for easy integration