Manufacturer Part Number
MRF6S21140HR3
Manufacturer
NXP Semiconductors
Introduction
High-efficiency RF power MOSFET transistor for 2.1 GHz wireless infrastructure applications
Product Features and Performance
30W output power
5dB gain
Operates at 2.12GHz
Chassis mount package
Product Advantages
High efficiency for improved thermal performance and reduced cooling requirements
Robust design for reliable operation in demanding wireless infrastructure applications
Key Technical Parameters
Power Output: 30W
Current (Test): 1.2A
Voltage (Rated): 68V
Voltage (Test): 28V
Frequency: 2.12GHz
Quality and Safety Features
RoHS3 compliant
NI-880H-2L package
Compatibility
Suitable for 2.1GHz wireless infrastructure applications
Application Areas
Cellular base stations
Wireless communication systems
RF power amplifiers
Product Lifecycle
Current production model, no plans for discontinuation
Several Key Reasons to Choose This Product
High-efficiency performance for improved thermal management
Robust design for reliable operation in demanding applications
Compatibility with 2.1GHz wireless infrastructure requirements
RoHS3 compliance for environmental sustainability