Manufacturer Part Number
MRF6S23100HR3
Manufacturer
NXP Semiconductors
Introduction
High-performance, high-frequency RF power MOSFET device
Product Features and Performance
20W output power at 2.4GHz
4dB gain
Operates at 28V
1A test current
68V rated voltage
Product Advantages
Efficient RF power amplification
Suitable for 2.4GHz wireless applications
Rugged and reliable LDMOS technology
Key Technical Parameters
RF power MOSFET
LDMOS technology
SOT-957A package
Tape & Reel (TR) packaging
Quality and Safety Features
RoHS3 compliant
Compatibility
Suitable for 2.4GHz wireless applications
Application Areas
Wireless infrastructure
Wireless communications
RF power amplifiers
Product Lifecycle
Current product, no discontinuation planned
Replacement or upgrade options available from NXP Semiconductors
Key Reasons to Choose This Product
High-performance RF power output
Efficient and reliable LDMOS technology
Suitable for 2.4GHz wireless applications
Rugged and compact SOT-957A package
RoHS3 compliance for environmental responsibility