MMBT2369 - Fairchild Semiconductor

Manufacturer Part Number

MMBT2369

Manufacturer

Fairchild (onsemi)

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

RoHS3 Compliant

SOT-23-3 Package

TO-236-3, SC-59, SOT-23-3 Package

Operating Temperature Range: -55°C to 150°C

Power Dissipation: 350 mW

Collector-Emitter Breakdown Voltage: 15 V

Collector Current (Max): 200 mA

Collector Cutoff Current (Max): 400 nA

Collector-Emitter Saturation Voltage: 250 mV @ 1 mA, 10 mA

Transistor Type: NPN

DC Current Gain (hFE): 40 (Min) @ 10 mA, 1 V

Surface Mount Mounting

Product Advantages

Compact and space-saving package

High power and voltage handling capability

Low collector cutoff current

Suitable for a variety of electronic applications

Key Technical Parameters

Power Dissipation

Breakdown Voltage

Current Ratings

Saturation Voltage

DC Current Gain

Quality and Safety Features

RoHS3 Compliant

Suitable for high-temperature environments

Compatibility

Compatible with various electronic circuits and systems

Application Areas

General-purpose amplifier and switching applications

Suitable for use in consumer electronics, industrial equipment, and more

Product Lifecycle

Mature product

Replacements and upgrades available

Key Reasons to Choose

Reliable performance and quality

Wide operating temperature range

Compact and space-saving package

Suitable for a variety of electronic applications