MMBT2222LT1G - onsemi

Manufacturer Part Number

MMBT2222LT1G

Manufacturer

onsemi

Introduction

Bipolar Junction Transistor (BJT)

NPN transistor

Product Features and Performance

Wide operating temperature range: -55°C to 150°C

Low power dissipation: 300 mW

High collector-emitter breakdown voltage: 30 V

High collector current rating: 600 mA

High current gain: min. 100 at 150 mA, 10 V

High transition frequency: 250 MHz

Product Advantages

High reliability and stability

Suitable for high-frequency applications

Cost-effective solution

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 30 V

Collector Current (IC): 600 mA

Collector Cutoff Current (ICBO): 10 nA

Collector-Emitter Saturation Voltage (VCE(sat)): 1.6 V @ 50 mA, 500 mA

DC Current Gain (hFE): min. 100 @ 150 mA, 10 V

Transition Frequency (fT): 250 MHz

Quality and Safety Features

RoHS3 compliant

Qualified to industrial and automotive standards

Compatibility

Package: SOT-23-3 (TO-236)

Surface mount design

Application Areas

Amplifiers

Switches

Drivers

Logic gates

General-purpose electronics

Product Lifecycle

This is an active and widely available product.

Replacement or upgrade options are readily available.

Key Reasons to Choose This Product

Excellent electrical performance across a wide temperature range

High reliability and stability for long-term use

Cost-effective solution for various electronic applications

Ease of integration with surface mount design

Availability of replacement and upgrade options