Manufacturer Part Number
MMBT2369LT1
Manufacturer
onsemi
Introduction
The MMBT2369LT1 is a small-signal NPN bipolar junction transistor (BJT) from onsemi, suitable for general-purpose amplifier and switching applications.
Product Features and Performance
Affordable and reliable transistor solution
Capable of handling up to 225 mW of power
Breakdown voltage of 15 V between collector and emitter
Maximum collector current of 200 mA
Gain (hFE) of at least 40 at 10 mA, 350 mV
Product Advantages
Compact surface-mount package (SOT-23-3)
RoHS non-compliant, suitable for legacy designs
Proven reliability and performance
Key Technical Parameters
Power rating: 225 mW
Collector-emitter breakdown voltage: 15 V
Maximum collector current: 200 mA
Gain (hFE): 40 minimum at 10 mA, 350 mV
Quality and Safety Features
Robust design for reliable operation
Compliance with industry standards
Compatibility
Suitable for a wide range of general-purpose amplifier and switching applications
Application Areas
Amplifier circuits
Switching circuits
General-purpose electronic devices
Product Lifecycle
This is an established product with continued availability
Replacements and upgrades may be available from onsemi or other manufacturers
Key Reasons to Choose This Product
Affordable and reliable transistor solution
Compact surface-mount package for space-constrained designs
Proven performance and quality
Suitable for a variety of general-purpose applications
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