Manufacturer Part Number
MMBT2484LT1G
Manufacturer
onsemi
Introduction
This is a single bipolar junction transistor (BJT) in a small surface-mount package, designed for general-purpose amplification and switching applications.
Product Features and Performance
Operates over a wide temperature range of -55°C to 150°C
Supports a maximum collector current of 100 mA
Provides a minimum DC current gain (hFE) of 250 at 1 mA and 5 V
Has a maximum collector-emitter saturation voltage of 350 mV at 100 μA and 1 mA
Offers a maximum collector-emitter breakdown voltage of 60 V
Dissipates up to 225 mW of power
Product Advantages
Compact and space-saving surface-mount package
Wide operating temperature range
Good current gain and low saturation voltage for efficient switching and amplification
Suitable for a variety of general-purpose applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCEO): 60 V
Collector Current (IC): 100 mA
Collector Cutoff Current (ICBO): 10 nA
DC Current Gain (hFE): 250 (minimum)
Collector-Emitter Saturation Voltage (VCE(sat)): 350 mV
Power Dissipation: 225 mW
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Reliable performance and quality assured by onsemi
Compatibility
Suitable for a wide range of general-purpose amplification and switching applications
Application Areas
Ideal for use in various electronic circuits, such as:
- Amplifiers
- Switches
- Drivers
- Logic gates
- Oscillators
- Voltage regulators
Product Lifecycle
This product is currently in production and widely available
Replacement or upgrade options may be available in the future as technology advances
Several Key Reasons to Choose This Product
Compact and space-saving surface-mount package
Wide operating temperature range for versatile applications
Good current gain and low saturation voltage for efficient switching and amplification
RoHS3 compliance for environmentally responsible design
Reliable performance and quality assured by the reputable manufacturer, onsemi