MMBT2369ALT1G - onsemi

Manufacturer Part Number

MMBT2369ALT1G

Manufacturer

onsemi

Introduction

NPN Bipolar Junction Transistor (BJT)

Designed for general-purpose switching and amplification applications

Product Features and Performance

Wide operating temperature range: -55°C to 150°C

Low collector-emitter saturation voltage: 500 mV @ 10 mA, 100 mA

High current gain: Minimum 20 @ 100 mA, 1 V

Low collector cutoff current: Maximum 400 nA

Power rating: 225 mW

Product Advantages

Robust and reliable performance

Suitable for a variety of general-purpose circuit applications

Compact and space-saving surface mount package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 15 V (max)

Collector Current (IC): 200 mA (max)

Power Dissipation: 225 mW

Quality and Safety Features

RoHS3 compliant

Meets industry quality and reliability standards

Compatibility

Compatible with various electronic circuit designs and applications

Application Areas

General-purpose switching and amplification circuits

Analog and digital electronic circuits

Industrial, consumer, and automotive electronics

Product Lifecycle

This product is an active and widely available part

Replacement and upgrade options are readily available from the manufacturer and distributors

Key Reasons to Choose This Product

Reliable and robust performance across a wide temperature range

Efficient power handling and low saturation voltage

Compact surface mount package for space-constrained designs

Compliance with industry quality and safety standards

Widespread availability and support for long-term applications