Manufacturer Part Number
MMBT2369LT1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Products
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
Small package size (SOT-23-3)
Surface mount design
Wide operating temperature range (-55°C to 150°C)
Low power dissipation (225 mW)
High collector-emitter breakdown voltage (15 V)
High collector current (200 mA)
Low collector cutoff current (400 nA)
Low collector-emitter saturation voltage (250 mV)
Good DC current gain (min. 40)
Product Advantages
Compact and space-saving design
Reliable performance over a wide temperature range
Efficient power handling
Suitable for various low-power electronic applications
Key Technical Parameters
Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C to 150°C
Power Dissipation: 225 mW
Collector-Emitter Breakdown Voltage: 15 V
Collector Current: 200 mA
Collector Cutoff Current: 400 nA
Collector-Emitter Saturation Voltage: 250 mV
DC Current Gain: min. 40
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Suitable for various low-power electronic applications, such as amplifiers, switches, and logic circuits
Application Areas
Consumer electronics
Industrial control
Telecommunications
Automotive electronics
Product Lifecycle
This product is an active and widely available component.
Replacements and upgrades may be available from onsemi or other manufacturers.
Key Reasons to Choose This Product
Compact and space-saving design
Wide operating temperature range
Efficient power handling
Reliable performance
Suitable for various low-power electronic applications
MMBT28S-B
MMBT2484LAMI Semiconductor/onsemi
MMBT2904Diodes Incorporated