MMBT2369A - onsemi

Manufacturer Part Number

MMBT2369A

Manufacturer

onsemi

Introduction

Bipolar Junction Transistor (BJT)

Single NPN transistor

Product Features and Performance

Low voltage, low power operation

High current gain

High collector-emitter breakdown voltage

Low collector-emitter saturation voltage

Product Advantages

Suitable for general-purpose amplifier and switch applications

Compact surface mount package (SOT-23-3)

Reliable and robust design

Key Technical Parameters

Operating temperature range: -55°C to 150°C

Power dissipation: 225 mW

Collector-emitter breakdown voltage: 15 V

Collector current (max): 200 mA

Collector cutoff current (max): 400 nA

Collector-emitter saturation voltage: 500 mV @ 10 mA, 100 mA

DC current gain (hFE): 40 min @ 10 mA, 1 V

Quality and Safety Features

Qualified to industry standards

Reliable performance and long lifespan

Compatibility

Compatible with various electronic circuits and systems

Application Areas

General-purpose amplifier and switch applications

Consumer electronics

Industrial controls

Telecommunications equipment

Product Lifecycle

Mature and widely available product

No plans for discontinuation, with ongoing support and availability of replacements

Key Reasons to Choose This Product

Robust and reliable performance

Compact and space-saving surface mount package

Wide operating temperature range

Excellent electrical characteristics for general-purpose applications

Cost-effective solution for many electronic designs