Manufacturer Part Number
MMBT2369A
Manufacturer
onsemi
Introduction
Bipolar Junction Transistor (BJT)
Single NPN transistor
Product Features and Performance
Low voltage, low power operation
High current gain
High collector-emitter breakdown voltage
Low collector-emitter saturation voltage
Product Advantages
Suitable for general-purpose amplifier and switch applications
Compact surface mount package (SOT-23-3)
Reliable and robust design
Key Technical Parameters
Operating temperature range: -55°C to 150°C
Power dissipation: 225 mW
Collector-emitter breakdown voltage: 15 V
Collector current (max): 200 mA
Collector cutoff current (max): 400 nA
Collector-emitter saturation voltage: 500 mV @ 10 mA, 100 mA
DC current gain (hFE): 40 min @ 10 mA, 1 V
Quality and Safety Features
Qualified to industry standards
Reliable performance and long lifespan
Compatibility
Compatible with various electronic circuits and systems
Application Areas
General-purpose amplifier and switch applications
Consumer electronics
Industrial controls
Telecommunications equipment
Product Lifecycle
Mature and widely available product
No plans for discontinuation, with ongoing support and availability of replacements
Key Reasons to Choose This Product
Robust and reliable performance
Compact and space-saving surface mount package
Wide operating temperature range
Excellent electrical characteristics for general-purpose applications
Cost-effective solution for many electronic designs
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