MMBT2222AWT1G - onsemi

Manufacturer Part Number

MMBT2222AWT1G

Manufacturer

onsemi

Introduction

The MMBT2222AWT1G is a small-signal NPN bipolar junction transistor (BJT) in a SC-70-3 (SOT323) surface-mount package.

Product Features and Performance

Low-power operation, 150 mW max power dissipation

High current capability, 600 mA max collector current

High voltage rating, 40 V max collector-emitter breakdown voltage

High frequency operation, 300 MHz transition frequency

Wide temperature range, -55°C to 150°C operating temperature

Product Advantages

Compact surface-mount package for high-density PCB designs

Reliable performance across wide temperature and voltage ranges

Suitable for various small-signal amplifier and switching applications

Key Technical Parameters

NPN transistor type

100 min DC current gain (hFE) at 150 mA, 10 V

1 V max collector-emitter saturation voltage at 50 mA, 500 mA

Quality and Safety Features

RoHS3 compliant

SC-70-3 (SOT323) package

Compatibility

Compatible with a variety of small-signal BJT circuits and applications

Application Areas

Amplifiers

Switches

Logic gates

Voltage regulators

General-purpose small-signal electronics

Product Lifecycle

Currently in production

Replacement and upgrade options available from onsemi

Key Reasons to Choose This Product

Robust performance across wide temperature and voltage ranges

High current and frequency capabilities for versatile applications

Compact surface-mount package for high-density PCB designs

Reliable and RoHS-compliant for quality assurance

Readily available from onsemi with replacement options