MMBT2222AT-7-F - Diodes Incorporated

Manufacturer Part Number

MMBT2222AT-7-F

Manufacturer

Diodes Incorporated

Introduction

The MMBT2222AT-7-F is a small-signal NPN bipolar junction transistor (BJT) in a SOT-523 surface-mount package.

Product Features and Performance

Operates in a wide temperature range of -55°C to 150°C

150mW maximum power dissipation

40V maximum collector-emitter breakdown voltage

600mA maximum collector current

10nA maximum collector-base leakage current

100 minimum DC current gain at 150mA collector current and 10V collector-emitter voltage

300MHz transition frequency

Product Advantages

Compact surface-mount package

Automotive-qualified AEC-Q101 standard

RoHS3 compliant

Key Technical Parameters

Package: SOT-523

Transistor Type: NPN

Collector-Emitter Breakdown Voltage (Max): 40V

Collector Current (Max): 600mA

Collector-Base Leakage Current (Max): 10nA

DC Current Gain (Min): 100

Transition Frequency: 300MHz

Quality and Safety Features

Compliant with RoHS3 directive

Automotive-qualified to AEC-Q101 standard

Compatibility

Suitable for a wide range of small-signal amplifier, switching, and logic circuit applications

Application Areas

Automotive electronics

Industrial control systems

Consumer electronics

Telecommunications equipment

Product Lifecycle

This product is actively supported and not near discontinuation

Replacement or upgrade options are available if needed

Key Reasons to Choose This Product

Proven reliability and performance in automotive and industrial applications

Compact surface-mount package for efficient board space utilization

Wide operating temperature range for versatile use cases

High transition frequency for high-speed signal processing

RoHS3 compliance for environmentally-friendly design