MMBT2222AM3T5G - onsemi

Manufacturer Part Number

MMBT2222AM3T5G

Manufacturer

onsemi

Introduction

Bipolar junction transistor (BJT)

Single NPN transistor

Commonly used in amplifier and switching circuits

Product Features and Performance

High switching speed

Low noise

High current handling capability

Suitable for high-frequency applications

Product Advantages

RoHS compliant

Small form factor (SOT-723 package)

Surface mount design for easy integration

Wide operating temperature range (-55°C to 150°C)

Key Technical Parameters

Power rating: 640 mW

Collector-emitter breakdown voltage: 40 V

Collector current (max): 600 mA

Collector cutoff current (max): 10 nA

Collector-emitter saturation voltage: 1 V @ 50 mA, 500 mA

DC current gain (hFE): 100 min @ 150 mA, 10 V

Transition frequency: 300 MHz

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

Suitable for a wide range of electronic circuit designs

Application Areas

Amplifier circuits

Switching circuits

High-frequency applications

Product Lifecycle

Currently available

No known plans for discontinuation

Replacement or upgrade options may be available

Key Reasons to Choose This Product

High performance and reliability

Small and compact design for easy integration

Wide operating temperature range

RoHS compliance for environmentally-friendly use

Suitable for various electronic circuit applications