MMBT2222ALT1G - onsemi

Manufacturer Part Number

MMBT2222ALT1G

Manufacturer

onsemi

Introduction

The MMBT2222ALT1G is a NPN bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) package, suitable for low-power, high-frequency switching and amplifying applications.

Product Features and Performance

NPN bipolar transistor

Surface mount package

Operating temperature range: -55°C to 150°C

Power dissipation: 225 mW

Collector-emitter breakdown voltage: 40 V

Collector current: 600 mA

Collector cutoff current: 10 nA

Collector-emitter saturation voltage: 1 V @ 50 mA, 500 mA

DC current gain: 100 @ 150 mA, 10 V

Transition frequency: 300 MHz

Product Advantages

Compact surface mount package

Wide operating temperature range

High collector current and breakdown voltage

High DC current gain and transition frequency

Suitable for high-frequency switching and amplifying applications

Key Technical Parameters

Package: SOT-23-3 (TO-236)

Transistor type: NPN

Collector-emitter breakdown voltage: 40 V

Collector current: 600 mA

Collector cutoff current: 10 nA

Collector-emitter saturation voltage: 1 V @ 50 mA, 500 mA

DC current gain: 100 @ 150 mA, 10 V

Transition frequency: 300 MHz

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Compatibility

Suitable for surface mount assembly

Compatible with standard SMD soldering processes

Application Areas

Switching and amplifying circuits

Audio and radio frequency (RF) applications

Power management circuits

Automotive electronics

Product Lifecycle

This product is currently in active production and availability.

Replacement or upgrade options may be available from the manufacturer.

Key Reasons to Choose This Product

Compact surface mount package for high-density designs

Wide operating temperature range for various environments

High performance specifications for demanding applications

Automotive-grade quality and safety compliance

Availability and compatibility for easy integration into systems