MMBT2222ALT3G - onsemi

Manufacturer Part Number

MMBT2222ALT3G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

RoHS3 Compliant

Small Surface Mount Package (SOT-23-3)

Wide Operating Temperature Range (-55°C to 150°C)

High Power Handling Capability (300mW)

High Voltage Breakdown (40V)

High Collector Current (600mA)

Low Collector Cutoff Current (10nA)

Low Saturation Voltage (1V @ 50mA, 500mA)

High DC Current Gain (100 min @ 150mA, 10V)

High Transition Frequency (300MHz)

Product Advantages

Compact Surface Mount Package

Excellent Electrical Performance

Wide Temperature Range Capability

Reliable and Durable Construction

Key Technical Parameters

Package: SOT-23-3 (TO-236)

Power Rating: 300mW

Collector-Emitter Breakdown Voltage: 40V

Collector Current: 600mA

Collector Cutoff Current: 10nA

Collector-Emitter Saturation Voltage: 1V

DC Current Gain: 100 min

Transition Frequency: 300MHz

Quality and Safety Features

RoHS3 Compliant

Reliable and Durable Construction

Compatibility

Compatible with a wide range of electronic circuits and systems that require a high-performance bipolar junction transistor in a small surface mount package.

Application Areas

Amplifiers

Switches

Logic Gates

Driver Circuits

Power Management

General Purpose Electronics

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Compact Surface Mount Package

Excellent Electrical Performance Specifications

Wide Operating Temperature Range

High Reliability and Durability

RoHS3 Compliance

Compatibility with a Wide Range of Applications