MMBT2222ALT1 - onsemi

Manufacturer Part Number

MMBT2222ALT1

Manufacturer

onsemi

Introduction

The MMBT2222ALT1 is a high-performance NPN bipolar junction transistor (BJT) designed for a wide range of general-purpose amplifier and switching applications.

Product Features and Performance

High frequency operation up to 300 MHz

Low collector-emitter saturation voltage (VCE(sat)) of 1V at 50 mA, 500 mA

High DC current gain (hFE) of 100 min at 150 mA, 10V

Wide operating temperature range of -55°C to 150°C

Surface mount package for compact design

Product Advantages

Excellent high-frequency performance

Low power consumption

Reliable and stable operation

Compact surface mount package

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 40V

Collector Current (IC): 600 mA

Collector Cutoff Current (ICBO): 10 nA

Power Dissipation: 225 mW

Quality and Safety Features

RoHS non-compliant

Reliable and durable construction

Compatibility

Suitable for a wide range of general-purpose amplifier and switching applications

Application Areas

Amplifiers

Switches

Logic gates

Relay drivers

General-purpose electronics

Product Lifecycle

The MMBT2222ALT1 is an established product and is not nearing discontinuation.

Replacement or upgrade options are available from onsemi and other manufacturers.

Key Reasons to Choose This Product

Excellent high-frequency performance up to 300 MHz

Low power consumption and high efficiency

Reliable and stable operation over a wide temperature range

Compact surface mount package for space-constrained designs

Readily available and supported by onsemi