Manufacturer Part Number
FQB19N20LTM
Manufacturer
Fairchild (onsemi)
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
D2PAK (TO-263) Packaging
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 140mOhm @ 10.5A, 10V
MOSFET (Metal Oxide) Technology
Current Continuous Drain (Id) @ 25°C: 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Power Dissipation (Max): 3.13W (Ta), 140W (Tc)
N-Channel FET Type
Vgs(th) (Max) @ Id: 2V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Key Technical Parameters
Packaging: TO-263-3, DPak (2 Leads + Tab), TO-263AB
Series: QFET
Packaging: Bulk
Mounting Type: Surface Mount
Quality and Safety Features
Compliant with industrial safety and reliability standards
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Power supplies
Motor drives
Switching regulators
Inverters
Product Lifecycle
Currently available
Replacements and upgrades may be available from the manufacturer
Key Reasons to Choose This Product
Excellent power handling and efficiency
Robust and reliable performance across a wide temperature range
Suitable for a variety of power conversion and control applications
Cost-effective solution from a trusted semiconductor manufacturer
FQB19N20CFairchild (onsemi)