Manufacturer Part Number
FQB19N20LTM
Manufacturer
onsemi
Introduction
N-channel MOSFET transistor
Designed for high-voltage switching and amplification applications
Product Features and Performance
Drain-to-Source Voltage (Vdss): 200V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 140mΩ @ 10.5A, 10V
Continuous Drain Current (Id): 21A @ 25°C (Tc)
Input Capacitance (Ciss): 2200pF @ 25V
Power Dissipation: 3.13W (Ta), 140W (Tc)
Operating Temperature Range: -55°C to 150°C (TJ)
Product Advantages
High voltage and current handling capabilities
Low on-state resistance for efficient power switching
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss)
Gate-to-Source Voltage (Vgs)
On-State Resistance (Rds(on))
Continuous Drain Current (Id)
Input Capacitance (Ciss)
Power Dissipation
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) package for surface mount
Compatibility
Suitable for high-voltage switching and amplification applications
Application Areas
Power supplies
Motor drives
Lighting ballasts
Inverters
Converters
Product Lifecycle
Current production part
Replacements and upgrades may be available
Several Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-state resistance for efficient power switching
Wide operating temperature range
RoHS3 compliance for environmental safety
DPAK (TO-263) package for surface mount applications
FQB20N60TMFAIRCHILDRCHILD