Manufacturer Part Number
FQB19N20CTM
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor designed for power switching and control applications
Product Features and Performance
Rated for 200V drain-to-source voltage
Continuous drain current of 19A at 25°C case temperature
On-resistance of 170mΩ at 9.5A and 10V gate-to-source voltage
Input capacitance of 1080pF at 25V drain-to-source voltage
Power dissipation of 3.13W at 25°C ambient temperature and 139W at 25°C case temperature
Operating temperature range of -55°C to 150°C
Product Advantages
Low on-resistance for high efficiency
High power handling capability
Suitable for high-voltage applications
Robust design for reliable operation
Key Technical Parameters
Drain-to-source voltage (Vdss): 200V
Maximum gate-to-source voltage (Vgs): ±30V
Threshold voltage (Vgs(th)): 4V at 250A drain current
Gate charge (Qg): 53nC at 10V gate-to-source voltage
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) surface mount package
Compatibility
Compatible with various power supply, motor control, and switching applications
Application Areas
Power supplies
Motor drives
Switching circuits
Industrial and consumer electronics
Product Lifecycle
Currently in production, no plans for discontinuation
Several Key Reasons to Choose This Product
High power handling and efficiency
Reliable operation across wide temperature range
Robust package and design for demanding applications
Suitable for high-voltage, high-current power switching requirements
FQB20N60TMFAIRCHILDRCHILD