Manufacturer Part Number
FQB1P50TM
Manufacturer
onsemi
Introduction
High-performance p-channel enhancement-mode power MOSFET
Product Features and Performance
Drain-to-source voltage (V_DS) up to 500V
Extremely low on-resistance (R_DS(on)) down to 10.5 Ohms
Continuous drain current (I_D) up to 1.5A at 25°C
Power dissipation (P_D) up to 3.13W at 25°C and 63W at case temperature
Fast switching speed
Optimized for efficient power conversion in various applications
Product Advantages
High voltage capability
Ultra-low on-resistance for improved efficiency
Compact surface-mount DPAK (TO-263) package
Suitable for high-frequency, high-power switching applications
Key Technical Parameters
Drain-to-source voltage (V_DS): 500V
Gate-to-source voltage (V_GS): ±30V
On-resistance (R_DS(on)): 10.5 Ohms
Continuous drain current (I_D): 1.5A at 25°C
Input capacitance (C_iss): 350pF at 25V
Power dissipation (P_D): 3.13W at 25°C, 63W at case temperature
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of high-voltage, high-power switching applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and widely available.
Several Key Reasons to Choose This Product
High voltage capability up to 500V
Ultra-low on-resistance for improved efficiency
Compact surface-mount DPAK (TO-263) package
Suitable for high-frequency, high-power switching applications
Designed and manufactured to high quality standards
Widely available and currently in production
FQB20N60FTMFAIRCHILDRCHILD