Manufacturer Part Number
FQB19N20CTM
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-Channel Power MOSFET in a D2PAK (TO-263) package
Product Features and Performance
Optimized for high efficiency and low power loss
Low on-resistance for reduced conduction losses
High drain-source voltage rating of 200V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent thermal performance and power handling
Suitable for high-power switching applications
Compact and space-saving D2PAK (TO-263) package
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 170mΩ @ 9.5A, 10V
Continuous Drain Current (Id): 19A @ 25°C
Input Capacitance (Ciss): 1080pF @ 25V
Power Dissipation (Ptot): 3.13W @ Ta, 139W @ Tc
Quality and Safety Features
Robust MOSFET technology with high reliability
Designed to meet industry safety and quality standards
Compatibility
Suitable for a wide range of high-power switching applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Lighting ballasts
Industrial automation and control
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power handling and thermal performance
Low on-resistance for high efficiency
Wide operating temperature range
Compact and space-saving D2PAK (TO-263) package
Suitable for a variety of high-power switching applications
FQB19N20Fairchild (onsemi)