Manufacturer Part Number
FQB19N20TM
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET transistor designed for use in high-frequency, high-efficiency power conversion applications.
Product Features and Performance
200V drain-to-source voltage rating
Low on-resistance of 150mΩ @ 9.7A, 10V
4A continuous drain current at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Low gate charge of 40nC @ 10V
High power dissipation of 3.13W at 25°C ambient, 140W at 25°C case
Product Advantages
Optimized for high-frequency, high-efficiency power conversion
Excellent thermal performance and power handling
Low switching losses for improved efficiency
Reliable and durable construction
Key Technical Parameters
MOSFET technology
N-channel type
DPAK (TO-263) package
±30V gate-to-source voltage rating
5V gate threshold voltage @ 250A
1600pF input capacitance @ 25V
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Compatible with a wide range of high-frequency power conversion circuits and applications.
Application Areas
Switch-mode power supplies
DC-DC converters
Class-D audio amplifiers
Motor drives
Industrial and consumer electronics
Product Lifecycle
The FQB19N20TM is an active, in-production part. Replacements and upgrades may be available from the manufacturer.
Key Reasons to Choose This Product
High efficiency and power handling capabilities
Excellent thermal performance and reliability
Low switching losses for improved system efficiency
Suitable for a wide range of high-frequency power conversion applications
Mature and well-established technology from a reputable manufacturer
FQB20N60FTMFAIRCHILDRCHILD