Manufacturer Part Number
FQB22P10TM
Manufacturer
onsemi
Introduction
The FQB22P10TM is a P-channel MOSFET device from onsemi's QFET series, designed for a wide range of power management and switching applications.
Product Features and Performance
100V Drain-Source Voltage (Vdss)
±30V Gate-Source Voltage (Vgs)
125mΩ Maximum On-Resistance (Rds(on)) at 11A, 10V
22A Continuous Drain Current (Id) at 25°C
1500pF Maximum Input Capacitance (Ciss) at 25V
75W Power Dissipation at 25°C, 125W at 25°C (case)
Operating Temperature Range: -55°C to 175°C
Product Advantages
Low on-resistance for improved efficiency
High current handling capability
Wide temperature range operation
Suitable for various power management and switching applications
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
4V Maximum Gate-Source Threshold Voltage (Vgs(th)) at 250μA
10V Drive Voltage for Minimum/Maximum On-Resistance
50nC Maximum Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 Compliant
DPAK (TO-263) Package
Compatibility
Surface mount package compatible
Application Areas
Power supplies
Motor drives
Lighting control
Automotive electronics
Industrial control systems
Product Lifecycle
Current production
Replacements and upgrades may be available
Key Reasons to Choose
Excellent power handling and efficiency
Wide operating temperature range
Compact surface-mount package
Suitable for a variety of power management and switching applications
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