Manufacturer Part Number
FQB25N33TM
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
Capable of handling high drain-to-source voltage (330V)
Low on-resistance (230mΩ) for efficient power transfer
Wide operating temperature range (-55°C to 150°C)
High current handling capability (25A continuous drain current)
Fast switching performance with low gate charge (75nC)
Product Advantages
Excellent power efficiency and thermal management
Reliable and durable design for demanding applications
Versatile surface mount packaging (DPAK/TO-263)
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 330V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 230mΩ @ 12.5A, 10V
Continuous Drain Current (Id): 25A @ 25°C
Input Capacitance (Ciss): 2010pF @ 25V
Power Dissipation: 3.1W (Ta), 250W (Tc)
Quality and Safety Features
MOSFET technology for reliable and safe operation
Suitable for high-voltage, high-current applications
Complies with relevant safety and quality standards
Compatibility
Suitable for use in a wide range of power electronics and power conversion applications
Application Areas
Power supplies
Motor drives
Switched-mode power supplies
Industrial automation equipment
Renewable energy systems
Product Lifecycle
Current model, no discontinuation or replacement plans announced
Several Key Reasons to Choose This Product
Exceptional power handling and efficiency
Robust design for reliable performance in harsh environments
Versatile DPAK/TO-263 surface mount packaging
Extensive operating temperature range for diverse applications
Proven onsemi quality and reliability
FQB22P10Fairchild (onsemi)