Manufacturer Part Number
FQB27P06TM
Manufacturer
Fairchild (onsemi)
Introduction
High-performance P-channel power MOSFET transistor for use in high-frequency, high-efficiency power conversion applications.
Product Features and Performance
Capable of high-current operation up to 27A
Low on-resistance of 70mΩ for improved efficiency
High blocking voltage of 60V
Wide operating temperature range of -55°C to 175°C
Fast switching speed and low gate charge for high-frequency operation
Product Advantages
Excellent thermal performance and power dissipation capability
Rugged and reliable design for demanding applications
Optimized for high-efficiency power conversion circuits
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Maximum Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 70mΩ @ 13.5A, 10V
Continuous Drain Current (Id): 27A @ 25°C
Input Capacitance (Ciss): 1400pF @ 25V
Power Dissipation (Pd): 3.75W @ 25°C, 120W @ 100°C
Quality and Safety Features
Rugged MOSFET design for high reliability
Compliant with relevant safety and environmental standards
Compatibility
Compatible with a wide range of high-frequency power conversion circuits and applications
Application Areas
Switching power supplies
DC-DC converters
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement options available from the manufacturer
Several Key Reasons to Choose This Product
High current handling capability up to 27A
Excellent efficiency due to low on-resistance
Wide operating temperature range for versatile applications
Fast switching and low gate charge for high-frequency operation
Reliable and rugged design for demanding environments
Compatibility with a wide range of power conversion circuits
FQB2N80AMI Semiconductor/onsemi