Manufacturer Part Number
FQB27P06TM
Manufacturer
onsemi
Introduction
The FQB27P06TM is a P-channel MOSFET transistor designed for high-performance power switching applications.
Product Features and Performance
60V drain-to-source voltage rating
27A continuous drain current at 25°C case temperature
70mΩ maximum on-resistance at 13.5A, 10V
1400pF maximum input capacitance at 25V
75W maximum power dissipation at 25°C ambient temperature
120W maximum power dissipation at 25°C case temperature
-55°C to 175°C operating temperature range
Product Advantages
Efficient power switching due to low on-resistance
High current handling capability
Compact DPAK (TO-263) package
Key Technical Parameters
Drain-to-source voltage (Vdss): 60V
Gate-to-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 70mΩ @ 13.5A, 10V
Continuous drain current (Id): 27A @ 25°C
Input capacitance (Ciss): 1400pF @ 25V
Power dissipation: 3.75W (Ta), 120W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
DPAK (TO-263) package
Application Areas
Power supplies
Motor drives
Industrial controls
Telecommunications equipment
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
High current handling and low on-resistance for efficient power switching
Compact DPAK package for space-constrained designs
Wide operating temperature range for industrial and automotive applications
Proven reliability and quality from onsemi