Manufacturer Part Number
FGA20S125P
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, high-current IGBT transistor for industrial applications.
Product Features and Performance
250W maximum power
Trench field-stop IGBT technology
1250V collector-emitter breakdown voltage
40A maximum collector current
5V maximum collector-emitter saturation voltage at 15V gate voltage and 20A collector current
129nC gate charge
60A maximum pulsed collector current
Standard input type
Through-hole mounting
Product Advantages
High power handling capability
High voltage and current ratings
Low collector-emitter saturation voltage for improved efficiency
Trench field-stop technology for improved performance
Key Technical Parameters
Power: 250W
IGBT Type: Trench Field Stop
Voltage: 1250V maximum collector-emitter breakdown
Current: 40A maximum collector, 60A maximum pulsed
Vce(on): 2.5V maximum at 15V gate, 20A collector
Gate Charge: 129nC
Quality and Safety Features
RoHS3 compliant
TO-3PN package
Compatibility
Can be used in various industrial applications that require high-power, high-voltage, and high-current semiconductor devices.
Application Areas
Motor drives
Power supplies
Welding equipment
Induction heating
Industrial automation and control
Product Lifecycle
This product is an active, standard IGBT transistor. No information on discontinuation or availability of replacements/upgrades is provided.
Key Reasons to Choose This Product
High power handling capability up to 250W
High voltage rating up to 1250V
High current rating up to 40A continuous, 60A pulsed
Low collector-emitter saturation voltage for improved efficiency
Trench field-stop technology for enhanced performance
RoHS3 compliance for environmental considerations
Through-hole mounting for easy integration into existing designs
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