Manufacturer Part Number
FGA20S125P
Manufacturer
onsemi
Introduction
The FGA20S125P is a discrete semiconductor product, specifically an Insulated Gate Bipolar Transistor (IGBT) in a single-transistor configuration.
Product Features and Performance
Power rating of 250 W
Trench Field Stop IGBT technology
Collector-Emitter Breakdown Voltage (max) of 1250 V
Collector Current (max) of 40 A
Collector-Emitter Saturation Voltage (max) of 2.5 V at 15 V Gate-Emitter Voltage and 20 A Collector Current
Gate Charge of 129 nC
Pulsed Collector Current (max) of 60 A
Product Advantages
High voltage and current handling capabilities
Low collector-emitter saturation voltage for efficient power conversion
Trench Field Stop technology for improved performance and reliability
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1250 V
Current Collector (Ic) (Max): 40 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Gate Charge: 129 nC
Current Collector Pulsed (Icm): 60 A
Quality and Safety Features
TO-3PN package for reliable performance and thermal management
Designed and manufactured to meet industry quality and safety standards
Compatibility
Through-hole mounting for easy integration into various circuit designs
Application Areas
Power conversion and control applications, such as motor drives, power supplies, and inverters
Product Lifecycle
This product is an active and readily available part from the manufacturer, onsemi.
Several Key Reasons to Choose This Product
High voltage and current handling capabilities for demanding power applications
Low collector-emitter saturation voltage for efficient power conversion
Trench Field Stop technology for improved performance and reliability
TO-3PN package for reliable performance and thermal management
Readily available and actively supported by the manufacturer, onsemi.
FGA25N1120ANTDFairchild (onsemi)