Manufacturer Part Number
FGA25N120ANTDTU-F109
Manufacturer
onsemi
Introduction
High-power, high-voltage IGBT (Insulated Gate Bipolar Transistor) suitable for a variety of industrial and power electronics applications.
Product Features and Performance
High voltage rating of 1200V
High current rating of 50A continuous, 90A pulsed
Low on-state voltage drop of 2.65V
Fast switching speed with turn-on time of 50ns and turn-off time of 190ns
Low switching losses of 4.1mJ (on) and 960μJ (off)
Designed for rugged, high-reliability operation
Product Advantages
Excellent electrical performance for efficient power conversion
Robust design for reliable operation in harsh environments
Versatile applications across industrial, motor drive, and power electronics sectors
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 50A
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A
Reverse Recovery Time (trr): 350ns
Gate Charge: 200nC
Operating Temperature: -55°C to 150°C (TJ)
Quality and Safety Features
RoHS3 compliant
Qualified to industrial standards for safety and reliability
Compatibility
TO-3P package for easy integration into existing designs
Application Areas
Industrial motor drives
Power inverters and converters
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
This IGBT model is currently in production and not nearing discontinuation
Replacements and upgrades may become available in the future as technology advances
Key Reasons to Choose This Product
Excellent electrical performance for efficient power conversion
Robust design for reliable operation in harsh environments
Versatile applications across industrial, motor drive, and power electronics sectors
RoHS3 compliance and industrial-grade quality
Easy integration into existing designs with standard TO-3P package
FGA25N120ANDFairchild (onsemi)
FGA25T120SDBFSC