Manufacturer Part Number
FGA25S125P
Manufacturer
onsemi
Introduction
High-power IGBT (Insulated Gate Bipolar Transistor) for high-voltage, high-current switching applications
Product Features and Performance
Trench field stop IGBT technology
Optimized for low conduction and switching losses
High blocking voltage of 1250V
High continuous collector current of 50A
High pulsed collector current of 75A
Low on-state voltage drop of 2.35V @ 15V, 25A
Gate charge of 204nC
Product Advantages
Efficient power conversion
High reliability and ruggedness
Compact and robust design
Key Technical Parameters
Power rating: 250W
Collector-emitter breakdown voltage: 1250V
Collector current (continuous): 50A
Collector current (pulsed): 75A
On-state voltage drop: 2.35V @ 15V, 25A
Gate charge: 204nC
Quality and Safety Features
Stringent quality control and testing
Designed for high-reliability applications
Compatibility
TO-3PN package
Compatible with various high-power electronic systems
Application Areas
Motor drives
Power supplies
Inverters
Welding equipment
Industrial automation
Renewable energy systems
Product Lifecycle
This product is currently in active production and widely available.
Replacements or upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and rugged design
Optimized for low losses and high performance
Widely used and supported in various high-power applications
Availability and compatibility with various systems
