Manufacturer Part Number
FGA25S125P
Manufacturer
Fairchild (onsemi)
Introduction
The FGA25S125P is a discrete semiconductor product, specifically a Trench Field Stop IGBT (Insulated Gate Bipolar Transistor) transistor.
Product Features and Performance
Power Rating: 250 W
Collector-Emitter Breakdown Voltage (Max): 1250 V
Collector Current (Max): 50 A
Collector Current Pulsed (Max): 75 A
Collector-Emitter Saturation Voltage (Max): 2.35 V @ 15 V, 25 A
Gate Charge: 204 nC
Trench Field Stop IGBT Technology
Product Advantages
High voltage and current handling capability
Low collector-emitter saturation voltage for improved efficiency
Trench Field Stop technology for improved performance
Key Technical Parameters
IGBT Type: Trench Field Stop
Voltage Collector Emitter Breakdown (Max): 1250 V
Current Collector (Ic) (Max): 50 A
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
Gate Charge: 204 nC
Current Collector Pulsed (Icm): 75 A
Quality and Safety Features
RoHS3 Compliant
Compatibility
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3PN
Application Areas
Suitable for use in various power electronic applications, such as motor drives, power supplies, and industrial control systems.
Product Lifecycle
Currently in production, no information on discontinuation or replacements.
Key Reasons to Choose This Product
High voltage and current handling capability for demanding applications
Low collector-emitter saturation voltage for improved efficiency
Trench Field Stop technology for enhanced performance
RoHS3 compliance for environmental responsibility
Through-hole mounting for secure and reliable installation
