Manufacturer Part Number
FGA25N120FTD
Manufacturer
onsemi
Introduction
High-voltage trench field-stop IGBT transistor
Product Features and Performance
Optimized for high-speed, high-frequency switching applications
Low conduction and switching losses
Fast switching capability with reduced tail current
Rugged and reliable design
High short-circuit withstand capability
Product Advantages
Efficient power conversion
High-speed switching performance
Improved energy efficiency
Enhanced reliability and durability
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 50 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Reverse Recovery Time (trr): 770 ns
Gate Charge: 160 nC
Current Collector Pulsed (Icm): 75 A
Switching Energy: 340J (on), 900J (off)
Td (on/off) @ 25°C: 48ns/210ns
Quality and Safety Features
Trench field-stop IGBT design for improved performance and reliability
Robust TO-3P package for high-power applications
Complies with relevant safety and quality standards
Compatibility
Suitable for a wide range of high-power, high-frequency switching applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial equipment
Renewable energy systems
Product Lifecycle
This product is currently in production and widely available
Replacement or upgrade options may be available in the future as technology advances
Several Key Reasons to Choose This Product
Efficient power conversion with low conduction and switching losses
High-speed switching capability for improved system performance
Rugged and reliable design for enhanced durability
Optimized for high-power, high-frequency switching applications
Proven track record and support from the manufacturer
