Manufacturer Part Number
FGA25N120ANTDTU
Manufacturer
onsemi
Introduction
High-performance insulated gate bipolar transistor (IGBT) for industrial applications
Product Features and Performance
High voltage rating of 1200V
High current rating of 50A continuous, 90A pulsed
Low on-state voltage drop of 2.65V at 50A
Fast switching with turn-on time of 50ns and turn-off time of 190ns
Low switching losses of 4.1mJ (on) and 960μJ (off)
Wide operating temperature range of -55°C to 150°C
Trench and NPT IGBT technology for improved performance
Product Advantages
Robust and reliable design for industrial use
High power density and efficiency
Fast switching for improved system performance
Versatile applications across various industrial sectors
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 50A
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A
Reverse Recovery Time (trr): 350ns
Gate Charge: 200nC
Current Collector Pulsed (Icm): 90A
Switching Energy: 4.1mJ (on), 960μJ (off)
Td (on/off) @ 25°C: 50ns/190ns
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
TO-3P package
Application Areas
Suitable for a wide range of industrial applications, including motor drives, power supplies, and inverters
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High voltage and current ratings for high-power applications
Low on-state voltage drop and switching losses for improved efficiency
Fast switching capabilities for enhanced system performance
Wide operating temperature range for robust and reliable operation
Proven trench and NPT IGBT technology for superior performance
Compliance with RoHS3 standards for environmental responsibility
FGA3065ADFFCS