Manufacturer Part Number
FGA180N33ATTU
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Single Insulated Gate Bipolar Transistor (IGBT)
Product Features and Performance
Trench IGBT technology
High power handling capacity up to 390W
Wide operating temperature range of -55°C to 150°C
Low collector-emitter saturation voltage (Vce(on)) of 1.4V at 15V, 40A
High collector current rating of 180A continuous, 450A pulsed
Low gate charge of 169nC for efficient switching
Product Advantages
Excellent power handling and thermal performance
Efficient and reliable switching
Suitable for high-power applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 330V
Collector Current (Max): 180A continuous, 450A pulsed
Collector-Emitter Saturation Voltage (Max): 1.4V at 15V, 40A
Gate Charge: 169nC
Quality and Safety Features
RoHS3 compliant
TO-3P package for reliable thermal performance
Compatibility
Through-hole mounting
Application Areas
High-power industrial and consumer electronics
Motor drives
Welding equipment
Uninterruptible power supplies (UPS)
Induction heating
Product Lifecycle
Current production status, no plans for discontinuation
Key Reasons to Choose This Product
Exceptional power handling and thermal capabilities
Efficient and reliable switching performance
Suitable for a wide range of high-power applications
RoHS3 compliance for environmental responsibility
Proven reliability in industrial and consumer electronics